Solution Processable Nanowire Field-Effect Transistors
نویسندگان
چکیده
منابع مشابه
Solution Processable Nanowire Field-Effect Transistors
Hybrid field-effect-transistors (FETs) with germanium nanowire (NW) arrays and organic gate dielectric are presented. The nanowire deposition steps are fully compatible with printed electronics route. NW FETs demonstrate good performance with On/Off ratios of ~10 and hole mobilities of ~13 cm/Vs in both nitrogen and air atmosphere. These results suggest that the hybrid nanowire FETs could be us...
متن کاملSolution processable multi-channel ZnO nanowire field-effect transistors with organic gate dielectric.
The present work focuses on nanowire (NW) applications as semiconducting elements in solution processable field-effect transistors (FETs) targeting large-area low-cost electronics. We address one of the main challenges related to NW deposition and alignment by using dielectrophoresis (DEP) to select multiple ZnO nanowires with the correct length, and to attract, orientate and position them in p...
متن کاملUltrathin CdSe Nanowire Field-Effect Transistors
We report the fabrication, and electrical and optical characterization, of solution-liquid-solid (SLS) grown CdSe nanowire field-effect transistors. Ultrathin nanowires (7–12 nm diameters) with lengths between 1 $m and 10 $m were grown by the SLS technique. Al-CdSe-Al junctions are then defined over oxidized Si substrate using photolithography. The nanowires, which were very resistive in the da...
متن کاملHigh-performance nanowire field-effect transistors
Semiconductor nanowires (NWs) 1, 2 have attracted significant interest because of their potential for a variety of different applications, including logic and memory circuitry, photonics devices, and chemical and biomolecular sensors. 3–6 Although many different types of semiconductor NW have been investigated, silicon NWs have become prototypical nanowires because they can be readily prepared,...
متن کاملMultiple Nanowire Gate Field Effect Transistors
Novel metal oxide semiconductor field effect transistor (MOSFET) architectures aimed at sub IV operation with enhanced current driving capability are reported. In our design, the planar channel region in a conventional MOSFET is replaced by an array of isolated Si wires. Directional metal coverage of the two sidewalls and the top surface of each Si wire help achieve enhanced gate control. Sub I...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: MRS Proceedings
سال: 2011
ISSN: 0272-9172,1946-4274
DOI: 10.1557/opl.2011.1437